0 avis
Vertical charge transfer and lateral transport in graphene/germanium heterostructures
Archive ouverte
Edité par HAL CCSD ; Washington, D.C. : American Chemical Society
International audience. Heterostructures consisting of two-dimensional (2D) materials and conventional semiconductors have attracted a lot of attention due to their application in novel device concepts. In this work, we investigated the lateral transport characteristics of graphene/germanium heterostructures and compared them with the transport properties of graphene on SiO2. The heterostructures were fabricated by transferring a single layer of graphene (Gr) onto a lightly doped germanium (Ge) (100) substrate. The field-effect measurements revealed a shift in the Dirac voltage of Gr on the Ge substrates compared to that of the Gr on SiO2. Transfer length model measurements show a significant difference in the sheet resistance of Gr on Ge compared to that of the Gr on SiO2. The results from the electrical and structural characterization suggest that a charge transfer in the order of 1012 cm–2 occurs between Gr and Ge resulting in a doping effect in the graphene sheet. A compact electrostatic model extracted the key electronic properties of the Gr/Ge interface. This study provides valuable insights into the electronic properties of Gr on Ge, which are vital to the development of novel devices based on mixed 2D and 3D structures.
Consulter en ligne
Suggestions
Du même auteur
